2SA1162 (120-240)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1 162 SOT-23 TRANSISTOR (PNP) 3 FEATURES . Low noise  . Complementary to 2SC2712  . Small Package  1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Current -Continuous -150 mA PD Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob Noise figure NF 70 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA 400 -0.3 80 VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHz,Rg=10KΩ V MHz 7 pF 10 dB CLASSIFICATION OF hFE Rank Range O Y GR(G) 70-140 120-240 200-400 B,Dec,2011 Typical Characterisitics Static Characteristic IC hFE Ta=100℃ -18uA -16uA -14uA -2 —— COMMON EMITTER VCE=-6V COMMON EMITTER Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT hFE 300 -20uA -3 IC (mA) -4 2SA1162 -12uA -10uA -8uA -6uA -1 200 Ta=25℃ 100 -4uA IB=-2uA 0 -0.1 -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -10 -3 -1 -0.3 -10 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -150 -30 IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 -100 Ta=100℃ Ta=25℃ -30 -0.8 Ta=25℃ Ta=100℃ -0.4 β=10 β=10 -10 -0.3 -3 -1 -30 -10 COLLECTOR CURRENT IC -150 -10 —— VBE Cob/ Cib 20 —— -100 -150 -30 COLLECTOR CURRENT IC (mA) VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 10 Ta=100℃ IC Cob C -10 CAPACITANCE (mA) (mA) -30 -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.0 fT 300 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 200 -10 -20 (V) —— Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY -3 -1 -0.5 COMMON EMITTER VCE=-6V -100 COLLECTOR CURRENT IC -0.0 -0.2 -100 -150 200 100 -1 -3 -30 -10 COLLECTOR CURRENT IC (mA) 150 100 50 0 -100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Dec,2011